Plasma Gases and their Applications
O2 100%
- Asbestos and man made mineral fibre detection
- Stripping photo resist
- Removal of organic contamination
- Removal of organic material (e.g. coal)
- Ageing paint (quick test for likely ageing characteristics)
- Degreasing of metals and polymers
- Hydrophilation
- General oxidation
- Polymer activation
Ar 100 %
- Degreasing and activation of metals
- Removal of epoxy bleed-out from hybrid circuits without oxidation,. Can be used with up to 3% O2 for faster reaction
- Cleaning EM parts
- Oxide removal
- Hydrophilation
H2
Used in with carrier gas in levels of <10%
- Metals cleaning (without oxidation)
- Hydrophobation
- Oxide removal
He 100%
- Degreasing and activation of metals and polymers
- Hydrophilation
- Cooling agent for O2
N2 100%
- Polymer activation
- Removal of epoxy bleed-out on hybrid circuits
- Removal of oxides
C2H4 100%
- Polymerization
CH4 100%
- Polymerization
C2H2 100%
- Polymerization
CF4 100%
- Epilamization
- Silicon etchant
SF6 100%
- Silicon etchant
FS-100
97% He 3% O2
- Removal of thin film organic contamination from easily oxidised metals and synthetics
- Low temperature removal of organics from metals without oxidation
- Low temperature ashing
FORM-ING
GAS
90 - 95% N
5 - 10% H
- Removing oxides, especially useful as a follow up process in hybrid cleaning or other oxidising processes as glass to metal seals
DS28
N2 with 2ppm water
- Removal of organics from sensitive substrates without oxidation
DS180
92% O2 8% CF4
- Removal of thick layers of photo resist
DS100
99.78%
(40% O2 to 60% He)
.22% CF4
- Removal of photo resist from chrome masks without oxidation of underlying chrome
- Removal of organic contamination from chrome
DS300
97% O2 3% CF4
- Photo resist removal in aluminium chambers or with Faraday insert in quartz chambers
- Removal of organic contamination
DS16281
99% N2 1% O2
- Removes photo resists films over oxidising or with TCR and resistor networks being unchanged (thin films only) may also have increased O2 as designated by the last digit signifying the percentage
FREON
MIXES
4% O2 96% CF4
8.5% O2 bal CF4
17.5% O2 bal CF4
97% (99.5% He .5% O2) 3% CF4
- Etching SiO2, Si3N4, Si, molybdenum, tantalum, tantalum nitride, tungsten
- DE100, will not etch A1, ceramic, GaAs, indium antimonide, or sapphire
- PDE100, more common etchant than DE100, etches 20 to 30% faster
- DE101,etches SiO2 and Si3N4 without etching silicon
IR101
70% ETHYLENE TRICHLORIDE 30% 1, 1, 2 TRICHLOROTRIFLOROETHANE
- Removal of inorganic contamination particularly tin from resist or contaminated chambers ( used in conjunction with O2), will also remove window oxide grown on exposed Si
FS100
97% He 3% O2
- Low temperature organic removal
- Flash strip of photo masks
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