Plasma gases and their applications

O₂ 100%
* Asbestos and man-made mineral fibre detection
* Stripping photo resist
* Removal of organic contamination
* Removal of organic material (eg coal)
* Ageing paint (quick test for likely ageing characteristics)
* Degreasing of metals and polymers
* Hydrophilation
* General oxidation
* Polymer activation


Ar 100 %
* Degreasing and activation of metals
* Removal of epoxy bleed-out from hybrid circuits without oxidation. Can be used with up to 3% O₂ for faster reaction
* Cleaning EM parts
* Oxide removal
* Hydrophilation


H₂ 100%
Used in with carrier gas in levels of amp<10%
* Metals cleaning (without oxidation)
* Hydrophobation
* Oxide removal


He 100%
* Degreasing and activation of metals and polymers
* Hydrophilation
* Cooling agent for O₂


N₂ 100%
* Polymer activation
* Removal of epoxy bleed-out on hybrid circuits
* Removal of oxides


C₂H₄ 100%
* Polymerization


CH₄ 100%
* Polymerization
C₂H₂ 100%
* Polymerization


CF₄ 100%
* Epilamization
* Silicon etchant


SF₆ 100%
* Silicon etchant


FS-100
97% He 3% O₂
* Removal of thin film organic contamination from easily oxidised metals and synthetics
* Low temperature removal of organics from metals without oxidation
* Low temperature ashing


FORM-ING GAS
90-95% N 5-10% H
* Removing oxides; especially useful as a follow up process in hybrid cleaning or other oxidising processes as glass to metal seals


DS28
N₂ with 2ppm water
* Removal of organics from sensitive substrates without oxidation


DS180
92% O₂ 8% CF4 * Removal of thick layers of photo resist DS100
99.78% (40% O₂ to 60% He) 22% CF4
* Removal of photo resist from chrome masks wit


DS300
97% O₂ 3% CF4
* Photo resist removal in aluminium chambers or with faraday insert in quartz chambers
* Removal of organic contamination


DS16281 99% N2 1% O₂
* Removes photo resists films over oxidising or with TCR and resistor networks being unchanged (thin films only). May also have increased O₂ as designated by the last digit signifying the percentage


IR101
70% Ethylene Trichloride 30% 1, 1, 2 Trichlorotrifloroethane
* Removal of inorganic contamination, particularly tin from resist or contaminated chambers (used in conjunction with O₂). Will also remove window oxide grown on exposed Si


FS100 97% He 3% O2
* Low temperature organic removal
* Flash strip of photo masks